IndiumV3, Main, Repository, bibRecord, 002678

Proposal of High-Electron Mobility Transistors With Strained InN Channel

Identifieur interne : 002678 ( Main/Repository ); précédent : 002677; suivant : 002679

Proposal of High-Electron Mobility Transistors With Strained InN Channel

Auteurs : RBID : Pascal:11-0155524

Descripteurs français

Pascal (Inist)
- Transistor mobilité électron élevée, Equation Schrödinger, Equation Poisson, Transistor pseudomorphique, Couche barrière, Cale espacement, Dopage, Densité porteur charge, Nitrure d'indium, Couche tampon, Nitrure de gallium, Composé binaire, Diélectrique permittivité élevée, Puits quantique, 8107S, InN, GaN.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Barrier layer, Binary compound, Buffer layer, Charge carrier density, Doping, Gallium nitride, High electron mobility transistor, High k dielectric, Indium nitride, Poisson equation, Pseudomorphic transistor, Quantum well, Schrödinger equation, Spacer.

Abstract

By using a Schrödinger-Poisson equation solver, we calculate band diagrams of potentially record fast III-N high-electron mobility transistors (HEMTs), which are based on strained InN channels. Assuming cation polarity, pseudomorphic HEMT devices are proposed with a relaxed InAlN buffer layer having Al mole fraction in the range of 0.10-0.15 and with an InAlN barrier layer. Calculations indicate highly confined electrons in the channel with a density of 1.4-2 × 10¹³ cm^-2 if the 5-10-nm-thick InN channel is separated from the barrier by < 0.8-nm-thick GaN spacer. Alternatively, for a nonpolar structure with an Al mole fraction of 0.3 in the InAlN buffer and for a doping 5 × 10¹⁹ cm^-3 in the InAIN barrier, we calculate the InN channel carrier density of approximately 1.4 × 10¹³ cm^-2. We propose to use high-k dielectrics to insulate the gate from the barrier for both of the transistor structures.

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to stream Main, to step Corpus: 003434

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Pascal:11-0155524

Le document en format XML

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<author><name sortKey="Kuzmik, Jan" uniqKey="Kuzmik J">Jan Kuzmik</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9</s1>
<s2>841 04 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>841 04 Bratislava</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Georgakilas, Alexandros" uniqKey="Georgakilas A">Alexandros Georgakilas</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9</s1>
<s2>841 04 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Slovaquie</country>
<wicri:noRegion>841 04 Bratislava</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Foundation for Research and Technology-Hellas</s1>
<s2>700 13 Crete</s2>
<s3>GRC</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Grèce</country>
<wicri:noRegion>Foundation for Research and Technology-Hellas</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0155524</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0155524 INIST</idno>
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<title level="j" type="abbreviated">IEEE trans. electron devices</title>
<title level="j" type="main">I.E.E.E. transactions on electron devices</title>
</seriesStmt>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier layer</term>
<term>Binary compound</term>
<term>Buffer layer</term>
<term>Charge carrier density</term>
<term>Doping</term>
<term>Gallium nitride</term>
<term>High electron mobility transistor</term>
<term>High k dielectric</term>
<term>Indium nitride</term>
<term>Poisson equation</term>
<term>Pseudomorphic transistor</term>
<term>Quantum well</term>
<term>Schrödinger equation</term>
<term>Spacer</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Transistor mobilité électron élevée</term>
<term>Equation Schrödinger</term>
<term>Equation Poisson</term>
<term>Transistor pseudomorphique</term>
<term>Couche barrière</term>
<term>Cale espacement</term>
<term>Dopage</term>
<term>Densité porteur charge</term>
<term>Nitrure d'indium</term>
<term>Couche tampon</term>
<term>Nitrure de gallium</term>
<term>Composé binaire</term>
<term>Diélectrique permittivité élevée</term>
<term>Puits quantique</term>
<term>8107S</term>
<term>InN</term>
<term>GaN</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
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<front><div type="abstract" xml:lang="en">By using a Schrödinger-Poisson equation solver, we calculate band diagrams of potentially record fast III-N high-electron mobility transistors (HEMTs), which are based on strained InN channels. Assuming cation polarity, pseudomorphic HEMT devices are proposed with a relaxed InAlN buffer layer having Al mole fraction in the range of 0.10-0.15 and with an InAlN barrier layer. Calculations indicate highly confined electrons in the channel with a density of 1.4-2 × 10<sup>13</sup>
 cm<sup>-2</sup>
 if the 5-10-nm-thick InN channel is separated from the barrier by < 0.8-nm-thick GaN spacer. Alternatively, for a nonpolar structure with an Al mole fraction of 0.3 in the InAlN buffer and for a doping 5 × 10<sup>19</sup>
 cm<sup>-3</sup>
 in the InAIN barrier, we calculate the InN channel carrier density of approximately 1.4 × 10<sup>13</sup>
 cm<sup>-2</sup>
. We propose to use high-k dielectrics to insulate the gate from the barrier for both of the transistor structures.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Proposal of High-Electron Mobility Transistors With Strained InN Channel</s1>
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<fA11 i1="01" i2="1"><s1>KUZMIK (Jan)</s1>
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<fA11 i1="02" i2="1"><s1>GEORGAKILAS (Alexandros)</s1>
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<fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9</s1>
<s2>841 04 Bratislava</s2>
<s3>SVK</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Foundation for Research and Technology-Hellas</s1>
<s2>700 13 Crete</s2>
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</fA66>
<fC01 i1="01" l="ENG"><s0>By using a Schrödinger-Poisson equation solver, we calculate band diagrams of potentially record fast III-N high-electron mobility transistors (HEMTs), which are based on strained InN channels. Assuming cation polarity, pseudomorphic HEMT devices are proposed with a relaxed InAlN buffer layer having Al mole fraction in the range of 0.10-0.15 and with an InAlN barrier layer. Calculations indicate highly confined electrons in the channel with a density of 1.4-2 × 10<sup>13</sup>
 cm<sup>-2</sup>
 if the 5-10-nm-thick InN channel is separated from the barrier by < 0.8-nm-thick GaN spacer. Alternatively, for a nonpolar structure with an Al mole fraction of 0.3 in the InAlN buffer and for a doping 5 × 10<sup>19</sup>
 cm<sup>-3</sup>
 in the InAIN barrier, we calculate the InN channel carrier density of approximately 1.4 × 10<sup>13</sup>
 cm<sup>-2</sup>
. We propose to use high-k dielectrics to insulate the gate from the barrier for both of the transistor structures.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F02</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A07S</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>High electron mobility transistor</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0>
<s5>01</s5>
</fC03>
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<s5>02</s5>
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<s5>02</s5>
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<s5>02</s5>
</fC03>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Poisson equation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Ecuación Poisson</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Transistor pseudomorphique</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Pseudomorphic transistor</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Transistor pseudomórfico</s0>
<s5>04</s5>
</fC03>
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<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Barrier layer</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Cale espacement</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Spacer</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Calce espaciamiento</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Dopage</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Doping</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Doping</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Densité porteur charge</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Charge carrier density</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Concentración portador carga</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Couche tampon</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Buffer layer</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Capa tampón</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Diélectrique permittivité élevée</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>High k dielectric</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Dieléctrico alta constante dieléctrica</s0>
<s5>26</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Puits quantique</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Quantum well</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Pozo cuántico</s0>
<s5>27</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>8107S</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>09</s5>
</fC07>
<fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>09</s5>
</fC07>
<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>09</s5>
</fC07>
<fN21><s1>101</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
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</record>

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Proposal of High-Electron Mobility Transistors With Strained InN Channel

Proposal of High-Electron Mobility Transistors With Strained InN Channel

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri